Liquid Phase Epitaxy growth, structure and spectroscopy of highly-doped 20 at.% Yb3+:LiYF4 thin films
نویسندگان
چکیده
Highly doped (20 at.%) Yb3+:LiYF4 single-crystalline thin films are grown on (001)-oriented bulk undoped LiYF4 substrates by Liquid Phase Epitaxy using lithium fluoride (LiF) as a solvent. The growth temperature lies around 741 °C (0.5–1 supercooling) and the rate is 1.8–2.6 μm/min. nature of confirmed X-ray diffraction polarized Raman spectroscopy. film morphology studied discussed. spectroscopic properties Yb3+ ions reported, indicating stimulated-emission cross-section 0.88 × 10−20 cm2 at 993.9 nm in π-polarization radiation trapping free lifetime 2F5/2 state 2.00 ms weak concentration-quenching. crystal-field splitting multiplets resolved 12 K. Highly-doped Yb3+:LiYF4/LiYF4 homoepitaxies promising for waveguide thin-disk lasers ~1 μm.
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Advanced Photonics Laboratory, Institute of Applied Optics, Swiss Federal Institute of Technology, Lausanne, Switzerland. Dpto. Física Aplicada, Facultad de Ciencias, Universidad de Cantabria, Santander, Spain. International Laser Center, Belarus State Polytechnical Academy, Minsk, Belarus. *Present address: Fukuda Laboratory, Institute of Multidisciplinary Research for Advanced Materials, Toho...
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ژورنال
عنوان ژورنال: Journal of Luminescence
سال: 2021
ISSN: ['1872-7883', '0022-2313']
DOI: https://doi.org/10.1016/j.jlumin.2021.118071